[Trac #1374] NAND size is misreported on B3.

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Mon May 7 13:37:27 EDT 2007


#1374: NAND size is misreported on B3.
----------------------+-----------------------------------------------------
 Reporter:  cjb       |        Owner:  wad    
     Type:  defect    |       Status:  closed 
 Priority:  blocker   |    Milestone:  BTest-3
Component:  hardware  |   Resolution:  fixed  
 Keywords:            |  
----------------------+-----------------------------------------------------
Changes (by jg):

  * status:  new => closed
  * resolution:  => fixed

Old description:

> From Tess, confirmed by cjb:
>
> 1. Enter Text Mode
> 2. Execute the command # cat /proc/mtd
>
> => Descriotion of mtd's name is " NAND 512MiB 3,3V 8-bit " while the
> specifition of NAND Flash is 1024 MiB  Test result: Samsung:1G ST:1G
> Micron:512MB  Hynix:512MB

New description:

 From Tess, confirmed by cjb:

 1. Enter Text Mode
 2. Execute the command # cat /proc/mtd

 => Description of mtd's name is " NAND 512MiB 3,3V 8-bit " while the
 specification of NAND Flash is 1024 MiB  Test result: Samsung:1G ST:1G
 Micron:512MB  Hynix:512MB

Comment:

 Terry Su:

 Due to we need to support 4 NAND Flash suppliers that Hynix / Micron /
 Samsung / ST, however Hynix/Micron is 2 dies type (512MB each die), so it
 need pin6 R/B2# ( Ready/Busy) from memory assert to controller(CAFÉ).
 Samsung/ST is one die chip, so pin6 is NC pin, it is OK. Those R/B1#,R/B2#
 pin is open drain, so we can connect pin6&pin7 together. This EC 2C25 is
 disconnect U31 pin 6 from GND then short pin6&pin7 for multi-used 4
 suppliers NAND Flash.

 Fixed in ECO-CL1-HW-00007

-- 
Ticket URL: <http://dev.laptop.org/ticket/1374#comment:15>
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